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B.Sc 3rd year APP-2363-11 To determine drift mobility in a N-type semiconductor by the Hall effect method AE-1282A
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APP-2363-11 AE-1282A

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Id-8042

Department All Practical Physics




Description

B.Sc IIIrd year Apparatus : Hall probe (ge crystal of thickness 0.4-0.5 mm) mounted on a wooden stand, another Hall probe (In-As crystal), fluxmeter (a gauss meter), electromagnet with pole pieces nearly 75 mm, in diameter and producing magnetic field of intensity nearly 10000 gauss in between the pole pices, a constant current power supply for the electromagnet, Hall effect set up provided with a constant current power supply connected with a rheostat and millivoltmeter (range 0-200 mV) and milliammeter (range 0-20mA)


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